TrenchMV TM Power
MOSFET
IXTH200N10T
IXTQ200N10T
V DSS
I D25
R DS(on)
= 100V
= 200A
≤ 5.5m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
V DSS
T J = 25 ° C to 175 ° C
100
V
V DGR
V GSM
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Transient
100
± 30
V
V
G
D
S
(TAB)
I D25
I LRMS
I DM
I A
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
200
75
500
40
A
A
A
A
TO-3P (IXTQ)
E AS
P D
T J
T C = 25 ° C
T C = 25 ° C
1.5
550
-55 ... +175
J
W
° C
G
D
S
(TAB)
T JM
175
° C
T stg
T L
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
-55 ... +175
300
260
° C
° C
° C
G = Gate
S = Source
D = Drain
TAB = Drain
M d
Weight
Mounting torque
TO-247
TO-3P
1.13 / 10
6.0
5.5
Nm/lb.in.
g
g
Features
International standard packages
175°C Operating Temperature
Avalanche Rated
Low R DS(on)
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Advantages
Easy to mount
BV DSS
V GS(th)
V GS = 0V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
100
2.5
4.5
V
V
Space savings
High power density
I GSS
V GS = ± 20V, V DS = 0V
± 200 nA
Applications
I DSS
R DS(on)
V DS = V DSS
V GS = 0V T J = 150 ° C
V GS = 10V, I D = 50A , Notes 1, 2
4.5
5 μ A
250 μ A
5.5 m Ω
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary - Side Switch
High Current Switching Applications
? 2008 IXYS CORPORATION, All rights reserved
DS99654A(10/08)
相关PDF资料
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相关代理商/技术参数
IXTH20N50D 功能描述:MOSFET 20 Amps 500V 0.33 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH20N55 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 20A I(D) | TO-218VAR
IXTH20N55MA 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 20A I(D) | TO-247(5)
IXTH20N55MB 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 20A I(D) | TO-247(5)
IXTH20N60 功能描述:MOSFET 20 Amps 600V 0.35 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH20N60 制造商:IXYS Corporation 功能描述:MOSFET N TO-247
IXTH20N60MA 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-247(5)
IXTH20N60MB 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | TO-247(5)